Datasheet4U Logo Datasheet4U.com

PTRA084858NF - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTRA084858NF is a 615-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band.

Key Features

  • include input and output matching, high gain and a thermally-enhanced plastic overmold package for cool and reliable operation. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTRA084858NF Package PG-HBSOF-6-3 Peak/Average Ratio (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 500 mA, VGS(PEAK) = 2 V, ƒ = 820 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 Gain 20 4.

📥 Download Datasheet

Datasheet Details

Part number PTRA084858NF
Manufacturer Wolfspeed
File Size 540.33 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTRA084858NF Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PTRA084858NF Thermally-Enhanced High Power RF LDMOS FET 615 W, 48 V, 730 – 960 MHz Description The PTRA084858NF is a 615-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced plastic overmold package for cool and reliable operation. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTRA084858NF Package PG-HBSOF-6-3 Peak/Average Ratio (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 500 mA, VGS(PEAK) = 2 V, ƒ = 820 MHz 3GPP WCDMA signal, 10 dB PAR, 3.