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PTRA094808NF - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band.

Key Features

  • include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Types: PG-HBSOF-6-2 PN: PTRA094808NF Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 2.05 V, ƒ = 895 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20.

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Datasheet Details

Part number PTRA094808NF
Manufacturer Wolfspeed
File Size 690.50 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTRA094808NF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTRA094808NF Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 – 960 MHz Description The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Types: PG-HBSOF-6-2 PN: PTRA094808NF Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 2.05 V, ƒ = 895 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 12 Gain 0 8 -20 PAR @ 0.