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PTRA094858NF - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTRA094858NF is a 400-watt Doherty LDMOS transistor intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band.

Key Features

  • include input and output match- t ing, high gain and thermally-enhanced package with earless flange. c Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. u Single-carrier WCDMA Drive-up d VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 2.1 V, ƒ = 895 MHz, 3GPP WCDMA signal, o PAR = 10 dB, 3.84 MHz BW r 24 60 p Efficiency 20 40 ed 16 Gain 20 Peak/Average Ratio, Gain (dB) Efficiency (%) u 12 0 in 8 PAR @ 0.01%.

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Datasheet Details

Part number PTRA094858NF
Manufacturer Wolfspeed
File Size 1.71 MB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTRA094858NF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTRA094858NF Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 859 – 960 MHz Description The PTRA094858NF is a 400-watt Doherty LDMOS transistor intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output match- t ing, high gain and thermally-enhanced package with earless flange. c Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. u Single-carrier WCDMA Drive-up d VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 2.1 V, ƒ = 895 MHz, 3GPP WCDMA signal, o PAR = 10 dB, 3.84 MHz BW r 24 60 p Efficiency 20 40 ed 16 Gain 20 Peak/Average Ratio, Gain (dB) Efficiency (%) u 12 0 in 8 PAR @ 0.