PTVA084007NF
PTVA084007NF is Thermally-Enhanced High Power RF LDMOS FET manufactured by Wolfspeed.
Description
The PTVA084007NF is a 370-watt (P3d B) LDMOS FET manufactured with Wolfspeed’s 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single-ended design and input and output matching that allow for use from 755 MHz to 805 MHz.
Package Types: PG-HBSOF-4-2
Peak/Average Ratio, Gain (d B) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 800 m A, ƒ = 805 MHz,
3GPP WCDMA signal, PAR = 10 d B,
3.84 MHz BW
Gain
Efficiency
-20
4 25
-40
PAR @ 0.01% CCDF 30 35 40 45 ptva084007nf_g1
-60
50 55
Average Output Power (d Bm)
Features
- Broadband internal input and output matching
- Target CW performance, 805 MHz, 48 V, single side
- Output power at P3d B = 370 W
- Efficiency = 64%
- Gain = 20.8 d B
- Capable of handling 10:1 VSWR @ 48 V, 100 W (CW) output power
- Integrated ESD protection
- Human Body Model class 2 (per ANSI/ESDA/ JEDEC JS-001)
- Low thermal resistance
- Pb-free and Ro HS pliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture) VDD = 48 V, IDQ = 800 m A, POUT = 80 W avg, ƒ1 = 805 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 d B @ 0.01% CCDF.
Characteristic Gain Drain Efficiency Adjacent Channel Power Ratio Output PAR @ 0.01% CCDF, 20...
