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PXAC200902FC - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric deisgn intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band.

Key Features

  • include dual path design, input and output matching, high gain and a thermallyenhanced push-pull package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 26 V, IDQ = 230 mA, ƒ = 1880 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 Efficiency 20 60 40 16 20 Gain 12 0 8 PAR @ 0.01% CCDF 4 -20 -40 0 25.

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Datasheet Details

Part number PXAC200902FC
Manufacturer Wolfspeed
File Size 436.39 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXAC200902FC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PXAC200902FC Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 – 2170 MHz Description The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric deisgn intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual path design, input and output matching, high gain and a thermallyenhanced push-pull package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 26 V, IDQ = 230 mA, ƒ = 1880 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 Efficiency 20 60 40 16 20 Gain 12 0 8 PAR @ 0.