• Part: PXAC200902FC
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Wolfspeed
  • Size: 436.39 KB
Download PXAC200902FC Datasheet PDF
Wolfspeed
PXAC200902FC
PXAC200902FC is Thermally-Enhanced High Power RF LDMOS FET manufactured by Wolfspeed.
Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz Description The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric deisgn intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual path design, input and output matching, high gain and a thermallyenhanced push-pull package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 26 V, IDQ = 230 mA, ƒ = 1880 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz...