Datasheet4U Logo Datasheet4U.com

PXAC241002FC Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Wolfspeed

Overview: PXAC241002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 – 2400.

General Description

The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric design, intended for use in multi-stantdard cellular power amplifier applications in the 2300 to 2400 MHz frequency band.

Key Features

  • include dual-path design, input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(main) = 230 mA, VGS(peak) = 1.5 V, ƒ = 2400 MHz 24 eqrpgjgofqq1h40gpdooBr53ggGPn'APRP,W3.C84DMMAHzsibgannadl,width 60 Peak/Average Ratio, Gain (dB) Efficiency (%) 20 Efficiency 40 16 20 Gain 12 0 8 PAR.

More Datasheets from Wolfspeed

Part Number Description
PXAC200902FC Thermally-Enhanced High Power RF LDMOS FET
PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET
PXAC210552FC Thermally-Enhanced High Power RF LDMOS FET
PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET
PXAD184218FV Thermally-Enhanced High Power RF LDMOS FET
PXAE183708NB Thermally-Enhanced High Power RF LDMOS FET
PXAE261908NF Thermally-Enhanced High Power RF LDMOS FET

PXAC241002FC Distributor