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PXAC241002FC - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric design, intended for use in multi-stantdard cellular power amplifier applications in the 2300 to 2400 MHz frequency band.

Key Features

  • include dual-path design, input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(main) = 230 mA, VGS(peak) = 1.5 V, ƒ = 2400 MHz 24 eqrpgjgofqq1h40gpdooBr53ggGPn'APRP,W3.C84DMMAHzsibgannadl,width 60 Peak/Average Ratio, Gain (dB) Efficiency (%) 20 Efficiency 40 16 20 Gain 12 0 8 PAR.

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Datasheet Details

Part number PXAC241002FC
Manufacturer Wolfspeed
File Size 263.17 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXAC241002FC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PXAC241002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 – 2400 MHz Description The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric design, intended for use in multi-stantdard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(main) = 230 mA, VGS(peak) = 1.5 V, ƒ = 2400 MHz 24 eqrpgjgofqq1h40gpdooBr53ggGPn'APRP,W3.C84DMMAHzsibgannadl,width 60 Peak/Average Ratio, Gain (dB) Efficiency (%) 20 Efficiency 40 16 20 Gain 12 0 8 PAR @ 0.