PXAE183708NB Overview
The PXAE183708NB is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
PXAE183708NB Key Features
- Broadband internal input and output matching
- Asymmetrical Doherty design
- Main: P3dB = 160 W Typ
- Peak: P3dB = 315 W Typ
- Typical Pulsed CW performance, 1880 MHz, 28 V, Doherty configuration, 10 µs pulse width, 10% duty cycle, Class AB (main)
- Output power at P1dB = 320 W
- Output power at P3dB = 430 W
- Drain efficiency = 60%
- Gain = 13.5 dB
- Capable of handling 10:1 VSWR @ 28 V, 54 W (1C WCDMA) output power