PXAE183708NB - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Wolfspeed

Datasheet Details

Part number	PXAE183708NB
Manufacturer	Wolfspeed
File Size	661.53 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXAE183708NB Datasheet
Additional preview pages of the PXAE183708NB datasheet.

Product details

Description

The PXAE183708NB is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Type: PG-HB2SOF-8-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ= 800 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 Gain 12 0 8 -20 PAR @ 0.01% CCDF 4 -40.

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Published: Jun 25, 2023 |