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PXFE211507FC - Thermally-Enhanced High Power RF LDMOS FET

General Description

t frequency band.

Key Features

  • include input and output matching, high gain c and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent u thermal performance and superior reliability d Single-carrier WCDMA Drive-up o VDD = 28 V, IDQ= 900 mA, ƒ = 2170 MHz 3GPP WCDMA signal, PAR = 10 dB, r 3.84 MHz BW p 24 60 d Gain 20 40 Peak/Average Ratio, Gain (dB) Efficiency (%) ue 16 20 Efficiency in 12 0 t 8 -20 n PAR @ 0.01% CCDF o 4 -40 PXFE2.

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Datasheet Details

Part number PXFE211507FC
Manufacturer Wolfspeed
File Size 1.06 MB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXFE211507FC Datasheet

Full PDF Text Transcription for PXFE211507FC (Reference)

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PXFE211507FC Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz Description The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandar...

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PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz t frequency band. Features include input and output matching, high gain c and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent u thermal performance and superior reliability d Single-carrier WCDMA Drive-up o VDD = 28 V, IDQ= 900 mA, ƒ = 2170 MHz 3GPP WCDMA signal, PAR = 10 dB, r 3.84 MHz BW p 24 60 d Gain 20 40 Peak/Average Ratio, Gain (dB) Efficiency (%) ue 16 20 Efficiency in 12 0 t 8 -20 n PAR @ 0.