WAB300M12BM3 Overview
WAB300M12BM3 1200 V, 300 A All-Silicon Carbide THB-80 Qualified, Switching Optimized, Half-Bridge Module Technical.
WAB300M12BM3 Key Features
- Industry Standard 62 mm Footprint
- High Humidity Operation THB-80 (HV-H3TRB)
- High Junction Temperature (175 °C) Operation
- Implements Switching Optimized Third Generation
- Low Inductance (10.2 nH) Design
- Silicon Nitride Insulator and Copper Baseplate