WAB300M12BM3 - Half-Bridge Module

Features

VDS IDS 1200 V 300 A V+.
Industry Standard 62 mm Footprint.
High Humidity Operation THB-80 (HV-H3TRB).
High Junction Temperature (175 °C) Operation.
Implements Switching Optimized Third Generation SiC MOSFET Technology.
Low Inductance (10.2 nH) Design.
Silicon Nitride Insulator and Copper Baseplate G1 K1 Mid G2 K2.

Wolfspeed

Datasheet Details

Part number	WAB300M12BM3
Manufacturer	Wolfspeed
File Size	3.00 MB
Description	Half-Bridge Module
Datasheet	WAB300M12BM3 Datasheet
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WAB300M12BM3 1200 V, 300 A All-Silicon Carbide THB-80 Qualified, Switching Optimized, Half-Bridge Module Technical Features VDS IDS 1200 V 300 A V+ • Industry Standard 62 mm Footprint • High Humidity Operation THB-80 (HV-H3TRB) • High Junction Temperature (175 °C) Operation • Implements Switching Optimized Third Generation SiC MOSFET Technology • Low Inductance (10.

Published: Oct 8, 2022 |