Datasheet Summary
1200 V, 400 A All-Silicon Carbide THB-80 Qualified, Conduction Optimized, Half-Bridge Module
Technical Features
VDS IDS
1200 V 400 A
V+
- Industry Standard 62 mm Footprint
- High Humidity Operation THB-80 (HV-H3TRB)
- High Junction Temperature (175 °C) Operation
- Implements Conduction Optimized Third
Generation SiC MOSFET Technology
- Low Inductance (10.2 nH) Design
- Silicon Nitride Insulator and Copper Baseplate
Applications
System Benefits
G1 K1
Mid
G2 K2
V-
- Railway & Traction
- Solar
- EV Chargers
- Industrial Automation & Testing
- Fast Time-to-Market with Minimal Development
Required for Transition from 62 mm Si IGBT
Packages
- Increased System Efficiency,...