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WS1A2639 - GaN on SiC Power Amplifier

Datasheet Summary

Description

The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology.

Features

  • GaN on SiC technology.
  • Frequency: 2496-2690 MHz.
  • Average Output Power : 6 to 8 W maximum.
  • PSAT = 48 dBm.
  • RF inputs matched to 50 Ω and DC matched.
  • Gate bias supply for main and peak sides available from either side of device.
  • Integrated harmonic terminations.
  • Pb-free and RoHS compliant WS1A2639 Package PG-LGA-6x6-3-1 Typical Broadband Performance Single-carrier LTE Performance (tested in Wolfspeed.

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Datasheet preview – WS1A2639

Datasheet Details

Part number WS1A2639
Manufacturer Wolfspeed
File Size 384.83 KB
Description GaN on SiC Power Amplifier
Datasheet download datasheet WS1A2639 Datasheet
Additional preview pages of the WS1A2639 datasheet.

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Full PDF Text Transcription

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WS1A2639 GaN on SiC Power Amplifier Module for 5G Description The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A2639 has been designed to operate from 2496 MHz to 2690 MHz supply voltages of up to 50 V at average output power levels of 6 to 8 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.
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