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WS1A3640
GaN on SiC Power Amplifier Module for 5G
Description
The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been designed to operate from 3300 MHz to 3800 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crestfactor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.
Features
• GaN on SiC technology • Frequency: 3300-3800 MHz • Average Output Power: 39.
WS1A3640 Datasheet
