WSGPA01 Description
The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package.
WSGPA01 Key Features
- GaN on SiC HEMT technology
- Operating frequency : up to 5 GHz
- P3dB : up to 10 W
- Supply voltage : up to 50 V
- Maximum junction temperature : 225 °C
- Pb-free and RoHS pliant
- ACPR +