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WST33H0NC - 300W GaN Transistor

General Description

Wolfspeed’s WST33H0NC is a 300W packaged, partially-matched transistor utilizing Wolfspeed’s high performance, 50V, 0.25um GaN on SiC production process.

The WST33H0NC operates from 2.42.5 GHz and targets microwave heating applications.

Key Features

  • Psat: 300 W.
  • DE: 75 %.
  • LSG: 17 dB.
  • S21: 26 dB.
  • S11: -5 dB.
  • S22: -6 dB.
  • CW operation Note: Features are typical class-C performance via a 2.4-2.5 GHz reference design under 25°C, CW operation (WST33H0NC-AMP1). Please reference performance charts for additional information.

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WST33H0NC 2.4-2.5 GHz, 300 W GaN Transistor Description Wolfspeed’s WST33H0NC is a 300W packaged, partially-matched transistor utilizing Wolfspeed’s high performance, 50V, 0.25um GaN on SiC production process. The WST33H0NC operates from 2.42.5 GHz and targets microwave heating applications. Under class-C operation, the WST33H0NC typically achieves 300 W of saturated output power with 14 dB of large signal gain and 75% drain efficiency via a 2.4-2.5 GHz reference design. Available in a thermally-enhanced, Cu-based package, the WST33H0NC provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their nextgeneration systems. Figure 1. WST33H0NC Figure 2.