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WSB1151
PNP EPITAXIAL SILICON TRANSISTOR
HIGH CURRENT AMPLIFIER
◇ Low Collector Saturation Voltage ◇ Complement to WSD1691
WR0459
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current(DC) Collector Current(Pulse) Collector Power Dissipation(Tc=25℃) Collector Power Dissipation(Ta=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PC PC Tj Tstg
(Ta=25℃)
Value -60 -60 -7 -5.0 -8.0 20 1.3 150 -55~ +150
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Unit V V V A A W W ℃ ℃
1. Emitter 2. Collector 3.
WSB1151 Datasheet
