D2012
Overview
- Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity D2012 D2012
| Part | D2012 |
|---|---|
| Description | Si NPN Transistor |
| Category | Transistor |
| Manufacturer | Wuxi Youda Electronics |
| Size | 171.90 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| D2012UK | Seme LAB | METAL GATE RF SILICON FET |
| D2011UK | Seme LAB | METAL GATE RF SILICON FET |
| D2015UK | Seme LAB | METAL GATE RF SILICON FET |
| D2017M | SANYO | FTD2017M |
| D2018UK | Seme LAB | METAL GATE RF SILICON FET |