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D2012 - Si NPN Transistor

General Description

AND

Key Features

  • Collector-Emitter voltage: BVCBO= 60V.
  • Collector current up to 3A.
  • High hFE linearity D2012 D2012 PIN.

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Datasheet Details

Part number D2012
Manufacturer Wuxi Youda Electronics
File Size 171.90 KB
Description Si NPN Transistor
Datasheet download datasheet D2012 Datasheet

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www.DataSheet4U.com YOUDA TRANSISTOR Si NPN TRANSISTOR¡ª DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity D2012 D2012 PIN CONFIGURATIONS PIN 1 2 3 SYMBOL Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (Tamb=25¡æ ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25¡æ Collector Dissipation PCM Tamb=25¡æ DC ICM Collector Current Pulse Icp Base Current IB Junction Temperature Tj Storage Temperature Tstg VALUE 60 50 7 30 1.5 3 7 0.