D2012 Overview
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D2012 Key Features
- Collector-Emitter voltage: BVCBO= 60V -Collector current up to 3A -High hFE linearity
| Part number | D2012 |
|---|---|
| Datasheet | D2012_WuxiYoudaElectronics.pdf |
| File Size | 171.90 KB |
| Manufacturer | Wuxi Youda Electronics |
| Description | Si NPN Transistor |
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| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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D2012 | NPN Silicon Power Transistor | STMicroelectronics |
| D2012 | 2SD2012 | Toshiba Semiconductor | |
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D2012UK | METAL GATE RF SILICON FET | Seme LAB |
See all Wuxi Youda Electronics datasheets
| Part Number | Description |
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