XC Memory GDP2BFLM
DDR3 SDRAM
FEATURES
● Power supply: VDD = VDDQ = 1.35V (1.283V - 1.45V)● Backward compatible to VDD = VDDQ = 1.5V ± 0.075V - Supports DDR3L devices to be backward compatible in 1.5V application
● Package: 96-Ball FBGA (x16)
● Array configuration: 8 Banks
● 8n-Bit prefetch architecture
● Differential clock inputs (CK, CK#)
● Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
● Programmable CAS (READ) latency (CL)
● Programmable posted CAS additive latency (AL)
● Programmable CAS (WRITE) latency (CWL)
● Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
● Selectable BC4 or BL8 on-the-fly (OTF)
● Self refresh mode
● Operating case temperature: -40℃ ≤ TCASE ≤ 95℃
● Average refresh period: -7.8us at 0℃ ≤ TCASE ≤ 85℃ -3.9us at 85℃<TCASE ≤ 95℃
● JEDEC JESD79-3F compliant
● RoHS compliant GDP2BFLM Note: 1. The functionality described and the timing specifications included in this data sheet are for the DLL enabled mode of operation. 1.1 A...