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FH3204G - N-Channel Enhancement Mode Power MOSFET

Description

The FH3204G uses advanced Shielded Gate trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Motor drivers Power switching application DC/DC Converters In Computing Isolated DC/DC Convert

Features

  • VDSS 40V ID 120A RDS(ON) MAX 1.6mΩ @ VGS=10V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation 1 G FH3204.
  • Schematic diagram Marking and pin Assignment PDFN5X6-8L top and bottom view Limiting Values Symbol Parameter Conditions VDS VGS ID.
  • IDM.
  • ,.
  • Ptot.
  • Tstg Drain.

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Datasheet Details

Part number FH3204G
Manufacturer XIN FEI HONG
File Size 2.48 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet FH3204G Datasheet
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    FH3204G SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD N-Channel Enhancement Mode Power MOSFET Description The FH3204G uses advanced Shielded Gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Motor drivers ● Power switching application ● DC/DC Converters In Computing ● Isolated DC/DC Converters In Telecom and Industrlal General Features VDSS 40V ID 120A RDS(ON) MAX 1.
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