XR10N06
Description
The XR10N06 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The XR10N06 meet the Ro HS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
TO252 Pin Configuration
- Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter
Symbol
Drain-source Voltage
Gate-source Voltage
Drain Current Pulsed Drain Current A
TA=25℃ TA=100℃
Total Power Dissipation B
TA=25℃ TA=100℃
Junction and Storage Temperature Range
VDS VGS ID IDM PD TJ ,TSTG
- Thermal resistance
Parameter Thermal Resistance Junction-to-Ambient C
Steady-State
Symbol RθJA
Limit 60 ±20 10 8 18 1.2 0.45
-55～+150
Unit V V A A W ℃
Typ
Max
Units
℃/W
.power-mos.
N-Ch 60V Fast Switching MOSFETs
- Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source...
