Datasheet Details
| Part number | XR10N06 |
|---|---|
| Manufacturer | XNRUSEMI |
| File Size | 1.21 MB |
| Description | N-Ch 60V Fast Switching MOSFETs |
| Datasheet | XR10N06-XNRUSEMI.pdf |
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Overview: 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology XR10N06 N-Ch 60V Fast Switching MOSFETs Product Summary BVDSS RDSON.
| Part number | XR10N06 |
|---|---|
| Manufacturer | XNRUSEMI |
| File Size | 1.21 MB |
| Description | N-Ch 60V Fast Switching MOSFETs |
| Datasheet | XR10N06-XNRUSEMI.pdf |
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The XR10N06 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The XR10N06 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
TO252 Pin Configuration ■ Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Symbol Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=100℃ Total Power Dissipation B TA=25℃ TA=100℃ Junction and Storage Temperature Range VDS VGS ID IDM PD TJ ,TSTG ■Thermal resistance Parameter Thermal Resistance Junction-to-Ambient C Steady-State Symbol RθJA Limit 60 ±20 10 8 18 1.2 0.45 -55～+150 Unit V V A A W ℃ Typ Max Units 85 105 ℃/W 1 www.power-mos.com XR10N06 N-Ch 60V Fast Switching MOSFETs ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 60 - - V Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance IDSS IGSS VGS(th) RDS(ON) VDS=60V, VGS=0V VDS=60V, VGS=0V, Tj=150℃ VGS= ±20V, VDS=0V VDS= VGS, ID=250μA VGS=10V, ID=3A VGS=4.5V, ID=3A - - 1 μA - - 100 - - ±100 nA 0.9 1.35 2 V - 60 82 mΩ - 68 92 Diode Forward Voltage Gate resistance VSD IS=3A, VGS=0V - 0.85 1.2 V RG f=1MHz, Open drain - 2 - Ω Maximum Body-Diode Continuous Current IS - - 10 A Dynamic Parameters Input Capacitance Ciss - 500 - Output Capacitance Coss VDS=30V, VGS=0V, f=1MHz - 28 - pF Reverse Transfer Capacitance Crss - 22 - Switching Parameters Tot
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