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XPX6602RD - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

Notebook AC-in load switch Battery protection charge/discharge Pin Configurations TDFN5 6-8L Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS TC=25°C Drain Current (Continuous)

Features

  • s V = 60V, DS I D = 150A R @V = 10V, TYP 2.6mΩ DS(ON) GS R @V = 4.5V, TYP 3.8mΩ DS(ON) GS.
  • General.

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Datasheet Details

Part number XPX6602RD
Manufacturer XPX
File Size 973.89 KB
Description N-Channel Enhancement Mode Power MOSFET
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    XPX6602RD N-Channel Enhancement Mode Power MOSFET  Features V = 60V, DS I D = 150A R @V = 10V, TYP 2.6mΩ DS(ON) GS R @V = 4.5V, TYP 3.8mΩ DS(ON) GS  General Description • Notebook AC-in load switch • Battery protection charge/discharge  Pin Configurations TDFN5*6-8L  Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS TC=25°C Drain Current (Continuous) *AC ID TC=70°C Drain Current (Pulse) *B IDM Power Dissipation TC=25°C PD Operating Temperature/ Storage Temperature TJ/TSTG  Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 18 1 Ratings 60 ±20 150 120 200 83 -55~150 Maximum 23 1.
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