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AO8205A - Dual N-Channel Enhancement Mode Field Effect Transistor

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Part number AO8205A
Manufacturer Xinchuang Century Electronics
File Size 65.63 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet AO8205A Datasheet

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AO8205A Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y VDS S 20V ID R DS (ON) (m ohm)Max 25@VGS = 4 . 5 V 5A 40@V GS = 2 . 5 V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S urface Mount P ackage. S1 D1/D2 S2 S OT 23 - 6 Top View 16 25 34 G1 D1/D2 G2 D1 D2 G1 S1 G2 S2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter S ymbol Limit Unit Drain-S ource Voltage VDS 20 V Gate-S ource Voltage VGS 12 V Drain C urrent-C ontinuous @ TJ=25 C ID b -P ulsed IDM 5 A 25 A Drain-S ource Diode Forward C urrent a IS 2 A Maximum P ower Dissipation a PD 1.
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