XNA20N60T
XNA20N60T is Trench-FS IGBT manufactured by Xiner.
Features
- Advanced Trench+FS (Field Stop) IGBT technology
- Low Collector-Emitter Saturation voltage, typical data is 1.7V @ 20A.
- Easy parallel switching capability due to positive
Temperature coefficient in Vce.
- 10u S short-circuit SOA
- Fast switching
- High input impedance
- Pb- Free product
- Marking Code XNS20N60T
Schematic Diagram
Applications
- General general-purpose inverter
- Motor control
- Intelligent power module.
D2pak
Symbol
V(BR)CES
VCE(sat)
VGE(th) VF IGES
IGESR ICES
Electrical characteristics(TJ = 25°C unless otherwise noted)
Parameter
Collector
- Emitter breakdown voltage
Collector-Emitter Saturation voltage
Gate threshold voltage
Diode Forward Voltage Gate to Emitter Forward
Leakage Gate to Emitter reverse
Leakage Zero gate voltage collector current
Test conditions Units Min.
VGE = 0V, ID =250u A
VGE=15V,
- IC=20A,TC=25°C
VGE=15V,
- IC=20A,TC=125°C
VGE= VCE, Ic = 0.25 m...
