• Part: XNG100B24TC1S5
  • Description: 1200V/100A IGBT Half-Bridge Module
  • Manufacturer: Xiner
  • Size: 173.07 KB
Download XNG100B24TC1S5 Datasheet PDF
Xiner
XNG100B24TC1S5
Features - High frequency operation - Low stray inductance - High reliability and Power density - Low switching loss and Vcesat Applications - Welding machine - UPS - Industry Inverter - Motor Control Circuit Diagram 34mm Half-Bridge Module Vces=1200v Ic=100A@Tc=100℃ Package Outlines (Unit:mm) Shenzhen Invsemi Co., Ltd Xiner IGBT Absolute Max Ratings Symbol VCES IC ICRM Ptotal VGES Symbol VCE(sat) VGE(th) ICES IGES Ciss Crss Tdon Tr Eon Tdoff Tf Eoff ISC RTh JC TVJ OP Parameter Condition Collector-to-Emitter Voltage Continuous DC collector current Repetitive peak collector current Total power dissipation Gate-Emitter peak voltage TVJ=25 °C TC = 100°C,TVJ MAX=150 °C tp=1ms TC = 25°C,TVJ MAX=150 °C l GBT Characteristics Parameter Collector-Emitter Saturation voltage Gate threshold voltage Collector-Emitter leakage current Gate-Emitter leakage current Input capacitance Reverse transfer capacitance Turn-on delay time, inductive load Rise time, inductive...