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XNM50250ATS - IPM

This page provides the datasheet information for the XNM50250ATS, a member of the XNM50250AT IPM family.

Description

XNM50250AT/ATSMOSFET，（）。 XNM50250AT/ATS is an Advanced IPM Based on Fast-Recovery MOSFET Technology as a Compact Inverter Solution for Small Power Motor Drive Applications Such as Fans and Pumps.

XNM50250AT/ATS6MOSFET、3HVIC、31NTC，。 XNM50250AT/ATS Contains Six MOSFETs, Three Half-Bridge G

Features

  • 3-Phase Inverter Including HVICs.
  • Three Separate Open-Source Pins from Low Side MOSFETs for Three Leg Current Sensing.
  • HVIC for Gate Driving and Undervoltage Protection.
  • Active-High Interface, Can Work With 3.3 V / 5 V Logic.
  • Optimized for Low Electromagnetic Interference.
  • Isolation Voltage Rating of 1500 Vrms for 1 min.
  • Temperature feedback via NTC.
  • Embedded Bootstrap Diode in the Package.
  • ROHS Compliant.

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Datasheet preview – XNM50250ATS

Datasheet Details

Part number XNM50250ATS
Manufacturer Xiner
File Size 1.78 MB
Description IPM
Datasheet download datasheet XNM50250ATS Datasheet
Additional preview pages of the XNM50250ATS datasheet.

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Full PDF Text Transcription

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Xiner / Technical Information XNM50250AT/ATS / IPM /Description  XNM50250AT/ATSMOSFET，（）。 XNM50250AT/ATS is an Advanced IPM Based on Fast-Recovery MOSFET Technology as a Compact Inverter Solution for Small Power Motor Drive Applications Such as Fans and Pumps.  XNM50250AT/ATS6MOSFET、3HVIC、31NTC，。 XNM50250AT/ATS Contains Six MOSFETs, Three Half-Bridge Gate Drive HVICs, Three Bootstrap Diodes and a NTC in a Compact Package Fully Isolated and Optimized for Thermal Performance.  XNM50250AT/ATS（EMI）。 XNM50250AT/ATS Features Low Electromagnetic Interference (EMI) Characteristics Through Optimizing Switching Speed and Reducing Parasitic Inductance.
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