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XNS10S12FT - IPM

General Description

XNS10S12FTTrench FS-IGBT,,。 XNS10S12FT is an Advanced IPM Based on Trench FS-IGBT Technology as a Compact and High Performance Inverter or Server Solution for Higher Power Consumption and Industrial Applications.

XNS10S12FT(EMI)。 XNS10S12FT

Key Features

  • Low Electromagnetic Interference (EMI) Characteristics Through Optimizing Switching Speed and Reducing Parasitic Inductance.
  • XNS10S12FTIGBT,。 XNS10S12FT Combines Optimized Circuit Protection and Drive Matched to Low-Loss IGBTs. System Reliability is Further Enhanced by the Integrated Under-Voltage Lock-Out and Short-Circuit Protection.
  • XNS10S12FTHVIC,IGBT,。 XNS10S12FT Combines High Speed HVIC Provides Opto-Coupler-Less Single-Supply IGBT Gate Driving Capability that Further Reduce th.

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Datasheet Details

Part number XNS10S12FT
Manufacturer Xiner
File Size 1.46 MB
Description IPM
Datasheet download datasheet XNS10S12FT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Xiner / Technical Information XNS10S12FT / IPM /Description  XNS10S12FTTrench FS-IGBT,,。 XNS10S12FT is an Advanced IPM Based on Trench FS-IGBT Technology as a Compact and High Performance Inverter or Server Solution for Higher Power Consumption and Industrial Applications.  XNS10S12FT(EMI)。 XNS10S12FT Features Low Electromagnetic Interference (EMI) Characteristics Through Optimizing Switching Speed and Reducing Parasitic Inductance.  XNS10S12FTIGBT,。 XNS10S12FT Combines Optimized Circuit Protection and Drive Matched to Low-Loss IGBTs. System Reliability is Further Enhanced by the Integrated Under-Voltage Lock-Out and Short-Circuit Protection.