XNS10S12FT Overview
XNS10S12FT基于Trench FS-IGBT技术，提供紧凑且高性能的变频伺服解决方案，适合较高功率消费和工业领域。 XNS10S12FT is an Advanced IPM Based on Trench FS-IGBT Technology as a pact and High Performance Inverter or Server Solution for Higher Power Consumption and Industrial Applications. XNS10S12FT通过优化开关速度和减小寄生电感实现低电磁干扰（EMI）特性。 XNS10S12FT.
XNS10S12FT Key Features
- XNS10S12FT内置优化的保护和驱动电路并与低损耗IGBT匹配，欠压锁定和短路保护进一步提高了系统可靠性。 XNS10S12FT bines Optimized Circuit Protection and Drive Matched
- XNS10S12FT内置高速HVIC，提供无光耦单电源IGBT栅极驱动能力，进一步减小了逆变器系统设计的总体尺寸。 XNS10S12FT bines High Speed HVIC Provides Opto-Coupler-Less Si
- 分开的负直流端子使得变频器的每相电流可以单独监视到。 Each Phase Current of Inverter can be Monitored Separately Due to the Divided Negative DC Ter
- 低损耗、短路额定的IGBT -采用DBC (Al2O3) 基板实现非常低的热阻 -内置自举二极管和专用的Vs 引脚以简化印刷电
- 低端IGBT的独立发射极开路引脚用于三相电流
- 内置负温度系数的电阻用于温度检测 -绝缘级别2500Vrm s/1min -单接地电源供电
- 家用设备 / 工业电机
- 1200V-10A 3-Phase IGBT Inverter Bridge Including
- Low-Loss, Short-Circuit Rated IGBTs
- Very Low Thermal Resistance Due to Using Al2O3 DBC
XNS10S12FT Applications
- XNS10S12FT通过优化开关速度和减小寄生电感实现低电磁干扰（EMI）特性。 XNS10S12FT Features Low Electromagnetic Interference (EMI) Characteristics Through Optimizing Switching Speed and Reduc
- XNS10S12FT内置优化的保护和驱动电路并与低损耗IGBT匹配，欠压锁定和短路保护进一步提高了系统可靠性。 XNS10S12FT bines Optimized Circuit Protection and Drive Matched to Low-Loss IGBTs. System Reliability is
- XNS10S12FT内置高速HVIC，提供无光耦单电源IGBT栅极驱动能力，进一步减小了逆变器系统设计的总体尺寸。 XNS10S12FT bines High Speed HVIC Provides Opto-Coupler-Less Single-Supply IGBT Gate Driving Capability
- 分开的负直流端子使得变频器的每相电流可以单独监视到。 Each Phase Current of Inverter can be Monitored Separately Due to the Divided Negative DC Terminals