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XNS15N120T - Trench-FS IGBT

Key Features

  • Advanced Trench+FS (Field Stop) IGBT technology.
  • Low Collector-Emitter Saturation voltage, typical data is 2.1V @ 15A.
  • Easy parallel switching capability due to positive Temperature coefficient in Vce.
  • Short-Circuit withstand time-10uS.
  • Fast switching.
  • High input impedance.
  • Pb- Free product Schematic Diagram.

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Datasheet Details

Part number XNS15N120T
Manufacturer Xiner
File Size 199.72 KB
Description Trench-FS IGBT
Datasheet download datasheet XNS15N120T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Xiner 1200V,15A,Trench-FS IGBT XNS15N120T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typical data is 2.1V @ 15A.  Easy parallel switching capability due to positive Temperature coefficient in Vce.  Short-Circuit withstand time-10uS  Fast switching  High input impedance  Pb- Free product Schematic Diagram Applications  Industry Inverter  Power switch circuit of induction cooker TO-247 Symbol V(BR)CES VCE(sat) VGE(th) VF IGES IGESR ICES Electrical characteristics(TJ = 25°C unless otherwise noted) Parameter Collector - Emitter breakdown voltage Collector-Emitter Saturation voltage Gate threshold voltage Test conditions Units VGE = 0V, ID = 0.