The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Data Sheet
XNS25N120T
1200V/25A IGBT
/PRODUCT FEATURES
+ Advanced Trench+FS IGBT technology
Low Collector-Emitter Saturation voltage
With anti-parallel fast recovery diode
TJ = 175 °C Maximum junction temperature: TJ = 175 °C
/APPLICATIONS
Motor control
2 1
3
1.Gate/ 2.Collector/ 3.Emitter/
/Key Performance and Package Parameters
Type XNS25N120T
VCE 1200V
IC 25A
VCEsat, Tvj=25℃ 1.8V
Shenzhen invsemi technology co,ltd IGBT_IPM_PIM_HVIC_ (invsemi.
XNS25N120T Datasheet
