XNS25N120T Description
Data Sheet XNS25N120T 1200V/25A 沟槽栅场截止型 IGBT 产品特点/PRODUCT.
XNS25N120T Key Features
- 先进的沟槽栅+场截止技术 Advanced Trench+FS IGBT technology
- 超低饱和压降 Low Collector-Emitter Saturation voltage
- 反并快恢复二极管 With anti-parallel fast recovery diode
- 最高结温 TJ = 175 °C Maximum junction temperature: TJ = 175 °C