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XP02N90I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

XP02N90 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP02N90I
Manufacturer YAGEO
File Size 251.44 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP02N90I Datasheet
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Full PDF Text Transcription

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XP02N90I Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Isolation Full Package ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free G S Description XP02N90 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID 900V 7.2Ω 1.
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