XP02N90I Datasheet | YAGEO

Description XP02N90 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all mercialindustrial through hole applications. The mold pound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID 900V 7.2Ω 1.9A TO-220CFM(I) Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range 900 +30 1.9 1.2 6 34.7 0.28 18 1.9 -55 to 150 -55 to 150 V V A A A W W/℃ m J A ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Value 3.6 62 Units ℃/W ℃/W 1 202312064YAGEO Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ∆BVDSS/∆Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=1m A Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A Static Drain-Source On-Resistance VGS=10V, ID=0.85A Gate Threshold...