XP10N011LM Datasheet | YAGEO

Description XP10N011L series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all mercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID 100V 11mΩ 11A D Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Drain-Source Voltage Gate-Source Voltage +20 ID@TA=25℃ Drain Current, VGS @ 10V3 ID@TA=70℃ Drain Current, VGS @ 10V3 Pulsed Drain Current1 PD@TA=25℃ Total Power Dissipation TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 50 Unit ℃/W 1 202311231YAGEO Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol...