Datasheet Details
| Part number | XP12A390YT |
|---|---|
| Manufacturer | YAGEO |
| File Size | 248.29 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP12A390YT-YAGEO.pdf |
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Overview: XP12A390YT Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D1 BVDSS D2 RDS(ON) ID3 120V 390mΩ 1.
| Part number | XP12A390YT |
|---|---|
| Manufacturer | YAGEO |
| File Size | 248.29 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP12A390YT-YAGEO.pdf |
|
|
|
G2 XP12A390 series are innovated design and silicon PMPAK® 3x3 process technology to achieve the lowest possible on- resistance and fast switching performance.
It provides the designer with an extreme efficient device fo The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
D1 D1 D2 D2 S1 G1 S2 G2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 120 V VGS Gate-Source Voltage +20 V ID@TA=25℃ ID@TA=70℃ Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V 1.7 A 1.3 A IDM Pulsed Drain Current1 8 A PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 XP12A390YT Rating 10 50 Units ℃/W ℃/W 1 202312041YAGEO 1 XP12A390YT Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
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