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XP12C220JY - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP12C220 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP12C220JY
Manufacturer YAGEO
File Size 254.88 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP12C220JY Datasheet
Additional preview pages of the XP12C220JY datasheet.

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Full PDF Text Transcription

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XP12C220JY Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free 2928-8 G2 S2 G1 S1 Description XP12C220 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G1 G2 S1 120V 220mΩ 1.7A -120V 380mΩ -1.
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