XP1334GEU
Description
XP1334 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
BVDSS RDS(ON) ID3
20V 65mΩ 2.1A D
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1
Total Power Dissipation Storage Temperature Range
Operating Junction Temperature Range
+8
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Value 360
Unit ℃/W
1 202311143YAGEO
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS...
