• Part: XP1430GEU6
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 127.67 KB
Download XP1430GEU6 Datasheet PDF
YAGEO
XP1430GEU6
Description G1 XP1430 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. SOT-363 package is ultra-small surface mount package and lead free Ro HS pliant. D1 G2 S1 60V 2.5Ω 230m A D2 S2 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 230 m A 190 m A -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 450 Unit ℃/W 1 202312013YAGEO Electrical Characteristics@Tj=25o C(unless otherwise...