XP15NA7R4CDT
Description
XP15NA7R4C series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
BVDSS
RDS(ON)
150V 7.4mΩ
PDFN5x6-FL D D DD
The PDFN5x6-FL package used advanced package and silicon bination for ultra low on-resistance and high efficiency, special for DC-DC converters application and the foot print is patible with SO-8 with backside heat sink and lower profile.
GS S S Bottom View
Top View
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
+20
ID@TC=25℃
Drain Current, VGS @ 10V4(Silicon Limited)
ID@TC=25℃
Drain Current, VGS @ 10V4(Package Limited)
ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM
Drain Current, VGS @ 10V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed...
