XP20NA010DS
Description
XP20NA010D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-263 package is widely preferred for all mercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
BVDSS RDS(ON) ID
200V 10.9mΩ
84A
D S TO-263(S)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ d I/dt EAS TSTG TJ
Drain-Source Voltage Gate-Source Voltage
Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Max. Diode mutation Speed5 Single Pulse Avalanche Energy6 Storage Temperature Range Operating Junction Temperature Range
200 +20 84 53 320 166.6...
