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XP20NA010DS - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

XP20NA010D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP20NA010DS
Manufacturer YAGEO
File Size 299.37 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP20NA010DS Datasheet

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XP20NA010DS Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low On-resistance ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S Description XP20NA010D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID 200V 10.