XP2322GN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

General Description

switching performance.

efficient device for use in a wide range of power applications.

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XP2322GN n-channel enhancement mode power mosfet by YAGEO - Datasheet Preview

Datasheet Details

Part number	XP2322GN
Manufacturer	YAGEO
File Size	179.85 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP2322GN Datasheet

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Full PDF Text Transcription (Reference)

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XP2322GN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Simple Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free D BVDSS RDS(ON) ID S SOT-23 G Description XP2322 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast G switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. 20V 90mΩ 2.