XP2332GEN
Description
XSemi MOSFETs utilized advanced processing techniques to
G achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The special design SOT-23 package with good thermal performance is widely preferred for all mercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
600V 72Ω 51m A D
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Drain Current4, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+32
51 m A
41 m A
68 m A
300 m A
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Value 250
Unit...
