XP2344GN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP2344 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

YAGEO

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Datasheet Details

Part number	XP2344GN
Manufacturer	YAGEO
File Size	143.12 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP2344GN Datasheet

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Full PDF Text Transcription

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XP2344GN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive D ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free S SOT-23 G Description XP2344 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID G 20V 22mΩ 6.

Published: Jul 2, 2025 |