XP2615GEY-HF
Description
AP2615 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for all mercial-industrial applications.
BVDSS RDS(ON) ID
-30V 52mΩ
- 5.0A
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Rating
- 30 +20 -5.0 -4.0 -20 2
-55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Thermal Data
Symbol Rthj-amb
Parameter Maximum Thermal Resistance, Junction-ambient3
Value 62.5
Unit ℃/W
1 202310161YAGEO
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol BVDSS RDS(ON)
VGS(th) gfs IDSS...
