XP2622GY
Description
D1
XP2622 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer
G1
G2 with an extreme efficient device for use in a wide range of power applications.
The SOT-26 package is widely used for all mercial-
S1 industrial applications.
50V 1.8Ω 520m A
D2
S2
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
50 +20 520 410 1.5 0.8 0.006
V V m A m A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Value 150
Unit ℃/W
1 202312014YAGEO
Electrical Characteristics@Tj...
