XP2622GY - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

YAGEO

Datasheet Details

Part number	XP2622GY
Manufacturer	YAGEO
File Size	228.16 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP2622GY Datasheet
Additional preview pages of the XP2622GY datasheet.

Product details

Description

D1 XP2622 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.It provides the designer G1 G2 with an extreme efficient device for use in a wide range of power applications.The SOT-26 package is widely used for all commercial- S1 industrial applications.50V 1.8Ω 520mA D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM

📁 Similar Datasheet

XP262N70023R-G - N-channel MOSFET (Torex Semiconductor)
XP262N7002TR-G - N-channel MOSFET (Torex)
XP261N70023R-G - N-channel MOSFET (Torex)
XP261N70025R-G - N-channel MOSFET (Torex Semiconductor)
XP261N70027R-G - N-channel MOSFET (Torex Semiconductor)
XP261N7002TR-G - N-channel MOSFET (Torex Semiconductor)
XP263N1001TR-G - N-channel MOSFET (Torex)
XP264N0301TR-G - N-channel MOSFET (Torex Semiconductor)

Other Datasheets by YAGEO

XP2623GY - DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP2626GY - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP2615GEY-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP20AN160H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP20AN160I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP20AN160J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Published: Jul 5, 2025 |