• Part: XP2906EY
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 197.11 KB
Download XP2906EY Datasheet PDF
YAGEO
XP2906EY
Description XP2906 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for all mercialindustrial applications. D1/D2 G1 G2 S1 S2 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4V Drain Current3, VGS @ 4V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +8 -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 100 Unit ℃/W 1 202312011YAGEO Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter...