XP2N030EN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

YAGEO

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Datasheet Details

Part number	XP2N030EN
Manufacturer	YAGEO
File Size	192.99 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP2N030EN Datasheet

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Full PDF Text Transcription

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XP2N030EN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free D BVDSS RDS(ON) ID S SOT-23S G Description XP2N030E series are innovated design and silicon process G technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. 20V 35mΩ 5.

Published: Jul 5, 2025 |