XP2N1K2EN1 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

fast switching performance.

applications.

YAGEO

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Datasheet Details

Part number	XP2N1K2EN1
Manufacturer	YAGEO
File Size	211.56 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP2N1K2EN1 Datasheet

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Full PDF Text Transcription

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XP2N1K2EN1 Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.2V Low Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Performance G ▼ RoHS Compliant & Halogen-Free D BVDSS RDS(ON) 20V 1.2Ω ID 200mA HBM ESD 2KV S Description 2 1 : Gate XP2N1K2E series are innovated design and silicon process 2 : Drain technology to achieve the lowest possible on-resistance and 3 : Source fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power 3 applications. SOT-723(N1) 1 The SOT-723 Package with very small footprint is suitable for all commercial-industrial surface mount application.

Published: Jul 5, 2025 |