XP2N1K2EN1 Description
Gate XP2N1K2E series are innovated design and silicon process 2 : Drain technology to achieve the lowest possible on-resistance and 3 : Source fast switching performance.
- Part: XP2N1K2EN1
- Manufacturer: YAGEO
- Size: 211.56 KB
Related YAGEO Datasheets
| Part Number | Description |
|---|---|
| XP2N025LN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP2N030EN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP2N050H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP2N075EN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP2N7002K | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |