XP2N1K2EN1 Overview
Gate XP2N1K2E series are innovated design and silicon process 2 : Drain technology to achieve the lowest possible on-resistance and 3 : Source fast switching performance.
| Part number | XP2N1K2EN1 |
|---|---|
| Datasheet | XP2N1K2EN1-YAGEO.pdf |
| File Size | 211.56 KB |
| Manufacturer | YAGEO |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Gate XP2N1K2E series are innovated design and silicon process 2 : Drain technology to achieve the lowest possible on-resistance and 3 : Source fast switching performance.
| Part Number | Description |
|---|---|
| XP2N025LN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP2N030EN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP2N050H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP2N075EN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP2N7002K | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP2N7002KU | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP20AN160H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP20AN160I | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP20AN160J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP20AN160P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |