XP2N1K2EN1
Description
1 : Gate
XP2N1K2E series are innovated design and silicon process
2 : Drain technology to achieve the lowest possible on-resistance and
3 : Source fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power
3 applications.
SOT-723(N1) 1
The SOT-723 Package with very small footprint is suitable for all mercial-industrial surface mount application.
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ IDM IS@TA=25℃ ISM PD@TA=25℃ TSTG TJ
Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 2.5V Pulsed Drain Current1 Source Current (Body Diode) Pulsed Source Current1(Body Diode) Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
+8
200 m A
400 m A
125 m A
800 m A
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient...
