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XP2P053N - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP2P053 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP2P053N
Manufacturer YAGEO
File Size 191.08 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP2P053N Datasheet

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Full PDF Text Transcription

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XP2P053N Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free S SOT-23S G Description XP2P053 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23S package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID3 -20V 65mΩ -4.
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