• Part: XP3A010MT
  • Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 667.09 KB
Download XP3A010MT Datasheet PDF
YAGEO
XP3A010MT
Description XP3A010 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device fo PMPAK ® 5x6 dual pad provide superior thermal performance and is design for surface mount applications. S1 G1 S2 G2 D1 D1 D2 D2 S1 G1 S2 G2 PMPAK® 5x6 Absolute Maximum Ratings . Symbol Parameter VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V4 Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 30 +20 34 14.6 11.7 80 3.57 -55 to 150 -55 to 150 Units V V A A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Rating 6 35 Units ℃/W ℃/W 1 202502032YAGEO Electrica...