XP3A035EM - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

fast switching performance.

applications.

YAGEO

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Datasheet Details

Part number	XP3A035EM
Manufacturer	YAGEO
File Size	205.33 KB
Description	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP3A035EM Datasheet

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Full PDF Text Transcription

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XP3A035EM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID3 30V 35mΩ 5.8A Description XP3A035E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and D1 D2 fast switching performance. It provides the designer with an G1 G2 extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial- S1 S2 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.

Published: Jul 6, 2025 |