XP3A035EM
Description
XP3A035E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and
D1
D2 fast switching performance. It provides the designer with an
G1
G2 extreme efficient device for use in a wide range of power applications.
The SO-8 package is widely preferred for all mercial-
S1
S2 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
+20
1.8 m J
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol Rthj-a
Parameter Maximum...
