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XP3C023AMT - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3C023A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP3C023AMT
Manufacturer YAGEO
File Size 730.84 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3C023AMT Datasheet

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Full PDF Text Transcription

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XP3C023AMT Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 D1 D2 D2 ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free N-CH P-CH Description S1 G1 S2 G2 XP3C023A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 30V 10.4mΩ 12A -30V 23.5mΩ -10A D1 D1 D2 D2 The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
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