XP3C023AMT
Description
S1 G1 S2 G2
XP3C023A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3
30V 10.4mΩ
12A -30V 23.5mΩ -10A
D1 D1 D2 D2
The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
S1 G1
S2
G2 PMPAK® 5x6
Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
Drain-Source Voltage
-30
VGS ID@TA=25℃ IDM PD@TA=25℃
Gate-Source Voltage Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation
+20
+20
-10
-40
TSTG
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to...
