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XP3CA010MT - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3CA010 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP3CA010MT
Manufacturer YAGEO
File Size 740.39 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3CA010MT Datasheet
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XP3CA010MT Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free D1 D1 D2 D2 Description S1 G1 S2 G2 XP3CA010 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. N-CH P-CH BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 30V 9.6mΩ 15A -30V 19mΩ -11A D1 D1 D2 D2 The PMPAK ® 5x6 package is special for voltage conversion S1 application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
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