XP3CA010MT
Description
S1 G1 S2 G2
XP3CA010 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
N-CH P-CH
BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3
30V 9.6mΩ
15A -30V 19mΩ -11A
D1 D1 D2 D2
The PMPAK ® 5x6 package is special for voltage conversion
S1 application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
G1 S2
G2
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
Drain-Source Voltage
-30
VGS ID@TA=25℃ ID@TA=70℃ IDM
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
+20
+20
-11
-9
-30
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature...
