XP3N1R8BMT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3N1R8B series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

YAGEO

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Datasheet Details

Part number	XP3N1R8BMT
Manufacturer	YAGEO
File Size	362.44 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP3N1R8BMT Datasheet

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Full PDF Text Transcription

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XP3N1R8BMT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Ultra Low On-resistance ▼ RoHS Compliant & Halogen-Free G S Description XP3N1R8B series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) 30V 1.

Published: Jul 5, 2025 |