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XP3N9R5AM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3N9R5A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP3N9R5AM
Manufacturer YAGEO
File Size 208.95 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3N9R5AM Datasheet

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Full PDF Text Transcription

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XP3N9R5AM Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D D D D SO-8 G S S S Description XP3N9R5A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID3 G 30V 9.5mΩ 12.
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